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TK290P65Y Silicon N-Channel MOSFET

TK290P65Y Description

MOSFETs Silicon N-Channel MOS (DTMOS) TK290P65Y TK290P65Y 1.Applications * Switching Voltage Regulators 2..

TK290P65Y Features

* (1) Low drain-source on-resistance: RDS(ON) = 0.23 Ω (typ. ) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.45 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Source DPAK 4. Absolute Maximum Ratings (N

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Silicon N-Channel MOSFET Toshiba
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