TK34A10N1 Datasheet, Mosfet, INCHANGE

TK34A10N1 Features

• Mosfet
• Low drain-source on-resistance: RDS(ON) = 7.9 mΩ (typ.) (VGS = 10 V)
• Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.5mA)
• 100% avalanche tested

PDF File Details

Part number:

TK34A10N1

Manufacturer:

INCHANGE

File Size:

248.22kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

TK34A10N1 Application

• Applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipmen

TAGS

TK34A10N1

INCHANGE

📁 Related Datasheet

TK34A10N1 - N-Channel MOSFET (Toshiba)
MOSFETs Silicon N-channel MOS (U-MOS-H) TK34A10N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(.

TK34E10N1 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
TK34E10N1 MOSFETs Silicon N-channel MOS (U-MOS-H) TK34E10N1 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source.

TK34E10N1 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK34E10N1，ITK34E10N1 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤9.5mΩ. (VGS = 10 V) .

TK30A06J3A - MOSFET (Toshiba Semiconductor)
TK30A06J3A TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSⅢ) TK30A06J3A Switching Regulator Applications z z z z Low drain-source O.

TK30A06N1 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
MOSFETs Silicon N-channel MOS (U-MOS-H) TK30A06N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(.

TK30A06N1 - N-Channel MOSFET (INCHANGE)
Isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK30A06N1，ITK30A06N1 ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 12.2mΩ (typ.) (VGS .

TK30E06N1 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
MOSFETs Silicon N-channel MOS (U-MOS-H) TK30E06N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(.

TK30E06N1 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK30E06N1，ITK30E06N1 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤15.0mΩ. (VGS = 10 V).

TK30J25D - Silicon N-Channel MOSFET (Toshiba Semiconductor)
MOSFETs Silicon N-Channel MOS (π-MOS) TK30J25D 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON).

TK30J25D - N-Channel MOSFET (INCHANGE)
iscN-Channel MOSFET Transistor TK30J25D ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 60mΩ (MAX.) (VGS = 10 V) ·Enhancement mode: Vth = 1.5 t.