Part number:
TK34E10N1
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
255.35 KB
Description:
Silicon n-channel mosfet.
TK34E10N1 Datasheet (255.35 KB)
* (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 7.9 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source TO-220 4. Absolute Maximum
TK34E10N1 Datasheet (255.35 KB)
TK34E10N1
Toshiba ↗ Semiconductor
255.35 KB
Silicon n-channel mosfet.
📁 Related Datasheet
TK34E10N1 N-Channel MOSFET (INCHANGE)
TK34A10N1 N-Channel MOSFET (Toshiba)
TK34A10N1 N-Channel MOSFET (INCHANGE)
TK30A06J3A MOSFET (Toshiba Semiconductor)
TK30A06N1 Silicon N-Channel MOSFET (Toshiba Semiconductor)
TK30A06N1 N-Channel MOSFET (INCHANGE)
TK30E06N1 Silicon N-Channel MOSFET (Toshiba Semiconductor)
TK30E06N1 N-Channel MOSFET (INCHANGE)
TK30J25D Silicon N-Channel MOSFET (Toshiba Semiconductor)
TK30J25D N-Channel MOSFET (INCHANGE)
