TK34A10N1 Datasheet, Mosfet, Toshiba

TK34A10N1 Features

• Mosfet (1) Low drain-source on-resistance: RDS(ON) = 7.9 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V,

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Part number:

TK34A10N1

Manufacturer:

Toshiba ↗

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238.60kb

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📄 Datasheet

Description:

N-channel mosfet.

TK34A10N1 Application

• Applications
• Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 7.9 mΩ (typ.) (VGS = 10 V) (2) Low lea

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TK34A10N1

Toshiba

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