Datasheet4U Logo Datasheet4U.com

TK3P80E N-Channel MOSFET

TK3P80E Description

isc N-Channel MOSFET Transistor *.

TK3P80E Features

* Low drain-source on-resistance: RDS(on) ≤4.9Ω.
* Enhancement mode: Vth = 2.5 to4.0V (VDS = 10 V, ID=0.3mA)
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Switching Voltage Regulators
* ABSOLUTE MAXI

TK3P80E Applications

* of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field

📥 Download Datasheet

Preview of TK3P80E PDF
datasheet Preview Page 2

Datasheet Details

Part number
TK3P80E
Manufacturer
INCHANGE
File Size
271.90 KB
Datasheet
TK3P80E-INCHANGE.pdf
Description
N-Channel MOSFET

📁 Related Datasheet

  • TK3P50D - Silicon N-Channel MOSFET (Toshiba)
  • TK30A06J3A - MOSFET (Toshiba Semiconductor)
  • TK30A06N1 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
  • TK30E06N1 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
  • TK30J25D - Silicon N-Channel MOSFET (Toshiba Semiconductor)
  • TK30S06K3L - Silicon N-Channel MOSFET (Toshiba Semiconductor)
  • TK31A60W - Silicon N-Channel MOSFET (Toshiba)
  • TK31E60W - Silicon N-Channel MOSFET (Toshiba)

📌 All Tags

N-Channel MOSFET INCHANGE
INCHANGE TK3P80E-like datasheet