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TK3P50D

Silicon N-Channel MOSFET

TK3P50D Features

* (1) Low drain-source on-resistance: RDS(ON) = 2.3 Ω (typ.) (2) High forward transfer admittance: |Yfs| = 1.0 S (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 500 V) (4) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK3P50D 1: Gate (G) 2:

TK3P50D Datasheet (229.47 KB)

Preview of TK3P50D PDF

Datasheet Details

Part number:

TK3P50D

Manufacturer:

Toshiba ↗

File Size:

229.47 KB

Description:

Silicon n-channel mosfet.

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TK3P50D Silicon N-Channel MOSFET Toshiba

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