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TK58E06N1

N-Channel MOSFET

TK58E06N1 Features

* Low drain-source on-resistance: RDS(on) ≤5.4mΩ. (VGS = 10 V)

* Enhancement mode: Vth =2.0 to 4.0V (VDS = 10 V, ID=0.5mA)

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation

* DESCRITION

* Switching Voltage Regulators

TK58E06N1 Datasheet (241.90 KB)

Preview of TK58E06N1 PDF

Datasheet Details

Part number:

TK58E06N1

Manufacturer:

INCHANGE

File Size:

241.90 KB

Description:

N-channel mosfet.

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TK58E06N1 N-Channel MOSFET INCHANGE

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