Datasheet4U.com

TK58E06N1 - N-Channel MOSFET

INCHANGE

📥 Download Datasheet

TK58E06N1 Datasheet Preview — Preview of TK58E06N1 PDF

datasheet Preview Page 2

Datasheet Details

Part number	TK58E06N1
Manufacturer	INCHANGE
File Size	241.90 KB
Description	N-Channel MOSFET
Datasheet	TK58E06N1-INCHANGE.pdf

TK58E06N1 Product details

Features

br>.
Low drain-source on-resistance: RDS(on) ≤5.4mΩ. (VGS = 10 V).
Enhancement mode: Vth =2.0 to 4.0V (VDS = 10 V, ID=0.5mA).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📁 TK58E06N1 Similar Datasheet

TK58A06N1 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
TK50A04K3 - MOSFETs (Toshiba Semiconductor)
TK50F15J1 - MOSFETs (Toshiba Semiconductor)
TK50J30D - Silicon N-Channel MOSFET (Toshiba Semiconductor)
TK50J60U - MOSFETs (Toshiba Semiconductor)
TK50P03M1 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
TK50P04M1 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
TK50S04K3L - Silicon N-Channel MOSFET (Toshiba Semiconductor)

Other Datasheets by INCHANGE

TK560A60Y - N-Channel MOSFET
TK560A65Y - N-Channel MOSFET
TK560P60Y - N-Channel MOSFET
TK560P65Y - N-Channel MOSFET
TK56A12N1 - N-Channel MOSFET
TK56E12N1 - N-Channel MOSFET

Published: Oct 4, 2020 |