IRGPH40

INSULATED GATE BIPOLAR TRANSISTOR

IRF

IRGPH40 Features

* Switching-loss rating includes all "tail" losses

* Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve G E C Fast Speed IGBT VCES = 1200V VCE(sat) ≤ 3.3V @VGE = 15V, I C = 17A n-channel Description Insulated Gate Bipolar Transistors (

IRGPH40 General Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, h.

IRGPH40 Datasheet (255.03 KB)

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Datasheet Details

Part number:

IRGPH40

Manufacturer:

IRF

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255.03 KB

Description:

Insulated gate bipolar transistor.

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IRGPH40 INSULATED GATE BIPOLAR TRANSISTOR IRF

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IRGPH40 Features

IRGPH40 General Description

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