IRGPH20M INSULATED GATE BIPOLAR TRANSISTOR

IRF

Description

Previous Datasheet Index Next Data Sheet PD - 9.1137 IRGPH20M INSULATED GATE BIPOLAR TRANSISTOR .
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, whil.

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Datasheet Specifications

Part number: IRGPH20M
Manufacturer: IRF
File Size: 240.36 KB
Datasheet: IRGPH20M_IRF.pdf
Description: INSULATED GATE BIPOLAR TRANSISTOR

Features

* Short circuit rated - 10µs @ 125°C, V GE = 15V
* Switching-loss rating includes all "tail" losses
* Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve G E C Short Circuit Rated Fast IGBT VCES = 1200V VCE(sat) ≤ 4.6V @VGE = 15V,

Applications

* These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability. TO-247AC Absolute Maximum Ratings Parameter VCES IC @ T C = 25°C IC @ T C = 100°C ICM ILM tsc VGE EARV PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Collect

IRGPH20M Distributors

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IRGPH20M INSULATED GATE BIPOLAR TRANSISTOR IRF

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