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IRGPH20S

INSULATED GATE BIPOLAR TRANSISTOR

IRGPH20S Features

* Switching-loss rating includes all "tail" losses

* Optimized for line frequency operation (to 400Hz) See Fig. 1 for Current vs. Frequency curve G E C Standard Speed IGBT VCES = 1200V VCE(sat) ≤ 3.3V @VGE = 15V, IC = 6.6A n-channel Description Insulated Gate Bipolar Transistors (

IRGPH20S General Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, h.

IRGPH20S Datasheet (240.26 KB)

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Preview of IRGPH20S PDF

Datasheet Details

Part number:

IRGPH20S

Manufacturer:

IRF

File Size:

240.26 KB

Description:

Insulated gate bipolar transistor.

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