IRGPH20S - INSULATED GATE BIPOLAR TRANSISTOR

Name: IRGPH20S
SKU: IRGPH20S-503927

IRF

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Datasheet Details

Part number	IRGPH20S
Manufacturer	IRF
File Size	240.26 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGPH20S_IRF.pdf

IRGPH20S Product details

Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.

Features

Switching-loss rating includes all "tail" losses.
Optimized for line frequency operation (to 400Hz) See Fig. 1 for Current vs. Frequency curve G E C Standard Speed IGBT VCES = 1200V VCE(sat) ≤ 3.3V @VGE = 15V, IC = 6.6A n-channel.

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Published: Aug 23, 2005 |