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IRGPH30S

INSULATED GATE BIPOLAR TRANSISTOR

IRGPH30S Features

* Switching-loss rating includes all "tail" losses

* Optimized for line frequency operation (to 400Hz) C Standard Speed IGBT VCES = 1200V G E VCE(sat) ≤ 3.0V @VGE = 15V, IC = 13A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have hi

IRGPH30S General Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, h.

IRGPH30S Datasheet (82.70 KB)

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Preview of IRGPH30S PDF

Datasheet Details

Part number:

IRGPH30S

Manufacturer:

IRF

File Size:

82.70 KB

Description:

Insulated gate bipolar transistor.

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