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IRGPH30S INSULATED GATE BIPOLAR TRANSISTOR

IRGPH30S Description

Previous Datasheet Index Next Data Sheet Preliminary Data Sheet PD - 9.1139 IRGPH30S INSULATED GATE BIPOLAR TRANSISTOR .
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, whil.

IRGPH30S Features

* Switching-loss rating includes all "tail" losses

IRGPH30S Applications

* TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Vol

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Datasheet Details

Part number
IRGPH30S
Manufacturer
IRF
File Size
82.70 KB
Datasheet
IRGPH30S_IRF.pdf
Description
INSULATED GATE BIPOLAR TRANSISTOR

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INSULATED GATE BIPOLAR TRANSISTOR IRF
IRF IRGPH30S-like datasheet