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IRGPH30MD2

INSULATED GATE BIPOLAR TRANSISTOR

IRGPH30MD2 Features

* Short circuit rated -10µs @125°C, V GE = 15V

* Switching-loss rating includes all "tail" losses TM

* HEXFRED soft ultrafast diodes

* Optimized for medium operating frequency ( 1 to 10kHz) C Short Circuit Rated Fast CoPack IGBT VCES = 1200V VCE(sat) ≤ 3.5V G @VGE

IRGPH30MD2 General Description

Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, applications. These new short circuit rated .

IRGPH30MD2 Datasheet (86.37 KB)

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Datasheet Details

Part number:

IRGPH30MD2

Manufacturer:

IRF

File Size:

86.37 KB

Description:

Insulated gate bipolar transistor.
Previous Datasheet Index Next Data Sheet Preliminary Data Sheet PD - 9.1115 IRGPH30MD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOV.

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IRGPH30MD2 INSULATED GATE BIPOLAR TRANSISTOR IRF

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