IRGPH30MD2 INSULATED GATE BIPOLAR TRANSISTOR

IRF

Description

Previous Datasheet Index Next Data Sheet Preliminary Data Sheet PD - 9.1115 IRGPH30MD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOV.
Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line.

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Datasheet Specifications

Part number: IRGPH30MD2
Manufacturer: IRF
File Size: 86.37 KB
Datasheet: IRGPH30MD2_IRF.pdf
Description: INSULATED GATE BIPOLAR TRANSISTOR

Features

* Short circuit rated -10µs @125°C, V GE = 15V
* Switching-loss rating includes all "tail" losses TM
* HEXFRED soft ultrafast diodes
* Optimized for medium operating frequency ( 1 to 10kHz) C Short Circuit Rated Fast CoPack IGBT VCES = 1200V VCE(sat) ≤ 3.5V G @VGE

Applications

* These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability. Absolute Maximum Ratings Parameter VCES IC @ T C = 25°C IC @ T C = 100°C ICM ILM IF @ T C = 100°C IFM tsc VGE PD @ T C = 25°C PD @ T C = 100°C TJ TSTG

IRGPH30MD2 Distributors

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IRGPH30MD2 INSULATED GATE BIPOLAR TRANSISTOR IRF

IRF IRGPH30MD2-like datasheet