IRGPH40M INSULATED GATE BIPOLAR TRANSISTOR

IRF

Description

Previous Datasheet Index Next Data Sheet Preliminary Data Sheet PD - 9.1029 IRGPH40M INSULATED GATE BIPOLAR TRANSISTOR .
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, whil.

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Datasheet Specifications

Part number: IRGPH40M
Manufacturer: IRF
File Size: 84.36 KB
Datasheet: IRGPH40M_IRF.pdf
Description: INSULATED GATE BIPOLAR TRANSISTOR

Features

* Short circuit rated - 10µs @ 125°C, V GE = 15V
* Switching-loss rating includes all "tail" losses

Applications

* These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability. TO-247AC Absolute Maximum Ratings Parameter VCES IC @ T C = 25°C IC @ T C = 100°C ICM ILM tsc VGE EARV PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Collect

IRGPH40M Distributors

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IRGPH40M INSULATED GATE BIPOLAR TRANSISTOR IRF

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