Description
IS61DDSB21M18C IS61DDSB251236C 1Mx18, 512Kx36 18Mb DDR-II (Burst 2) SIO SYNCHRONOUS SRAM APRIL 2016 .
The 18Mb IS61DDSB251236C and IS61DDSB21M18C are synchronous, high-performance CMOS static random access memory (SRAM) devices.
Features
* 512Kx36 and 1Mx18 configuration available.
* On-chip delay-locked loop (DLL) for wide data valid
window.
* Seperate I/O read and write ports.
* Synchronous pipeline read with self-timed late write
operation.
* Double Data Rate (DDR) interface for read and
write input ports.
Applications
* where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance
