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IS61WV102416FALL

1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM

IS61WV102416FALL Features

* High-speed access time: 8ns, 10ns, 20ns

* High- performance, low power CMOS process

* Multiple center power and ground pins for greater noise immunity

* TTL compatible inputs and outputs

* Single power supply

* 1.65V-2.2V VDD (IS61WV102416FALL)

* 2.4V-3.6V VDD (

IS61WV102416FALL General Description

FUNCTIONAL BLOCK DIAGRAM The ISSI IS61/64WV102416FALL/BLL are high-speed, 16M bit static RAMs organized as 1024K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance .

IS61WV102416FALL Datasheet (711.80 KB)

Preview of IS61WV102416FALL PDF

Datasheet Details

Part number:

IS61WV102416FALL

Manufacturer:

ISSI

File Size:

711.80 KB

Description:

1m x 16 high-speed asynchronous cmos static ram.

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IS61WV102416FALL HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM ISSI

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