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IS67WVE4M16EBLL, IS66WVE4M16EALL Datasheet - ISSI

IS67WVE4M16EBLL - 64Mb Async/Page PSRAM

PSRAM products are high-speed, CMOS pseudo-static random access memory developed for low-power, portable applications.

The 64Mb DRAM core device is organized as 4 Meg x 16 bits.

These devices include the industry-standard, asynchronous memory interface found on other low-power SRAM or pseudo-SRAM (P

IS66WVE4M16EALL/BLL/CLL IS67WVE4M16EALL/BLL/CLL 64Mb Async/Page PSRAM PRELIMINARY INFORMATION Overview The IS66/67WVE4M16EALL/BLL/CLL is an integrated memory device containing 64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4M words by 16 bits.

The device includes several power saving modes : Partial Array Refresh mode where data is retained in a portion of the array and Deep Power Down mode.

Both these modes reduce standby current drain.

The die has separa

IS67WVE4M16EBLL Features

* Asynchronous and page mode interface

* Dual voltage rails for optional performance

* ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V

* BLL: VDD 2.7V~3.6V, VDDQ 2.7V~3.6V

* CLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V

* Page mode read access

* Interpage Read access : 55ns, 70ns

* Intra

IS66WVE4M16EALL-ISSI.pdf

This datasheet PDF includes multiple part numbers: IS67WVE4M16EBLL, IS66WVE4M16EALL. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

IS67WVE4M16EBLL, IS66WVE4M16EALL

Manufacturer:

ISSI

File Size:

586.58 KB

Description:

64mb async/page psram.

Note:

This datasheet PDF includes multiple part numbers: IS67WVE4M16EBLL, IS66WVE4M16EALL.
Please refer to the document for exact specifications by model.

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IS66WVE4M16EALL 64Mb Async Page PSRAM ISSI