IS66/67WVE4M16EALL/BLL/CLL IS66/67WVE4M16TALL/BLL/CLL 64Mb Async/Page PSRAM AUGUST 2018 Overview The IS66/67WVE4M16EALL/BLL/CLL and IS66/67WVE4M16TALL/BLL/CLL integrated memory device containing 64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4M words by 16 bits.
The device includes several power saving modes : Partial Array Refresh mode where data is retained in a portion of the array and Deep Power Down mode.
Both these modes reduce standby current dra
IS67WVE4M16TCLL Features
* Asynchronous and page mode interface
* Dual voltage rails for optional performance
* ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V
* BLL: VDD 2.7V~3.6V, VDDQ 2.7V~3.6V
* CLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V
* Page mode read access
* Interpage Read access : 60ns, 70ns
* Intrap
Datasheet Details
IS67WVE4M16TCLL, IS66WVE4M16EALL
ISSI
586.58 KB
64mb async/page psram.
This datasheet PDF includes multiple part numbers: IS67WVE4M16TCLL, IS66WVE4M16EALL.
Please refer to the document for exact specifications by model.
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