DE275-101N30A Datasheet - IXYS Corporation

DE275-101N30A RF Power MOSFET

DE275-101N30A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω IS = 0 VDSS ID25 Maximum Ratings 100 100 ±20 ±30 30.0 240 TBD TBD 5.5 >200 550 V V V V A A A mJ V/ns V/ns W W W C/W C/W SG1 SG2 GA.

DE275-101N30A Features

* min. VDSS VGS(th) IGSS IDSS RDS(on) gfs TJ VGS = 0 V, ID = 3 ma VDS = VGS, ID = 250 µa VGS = ±20 VDC, VDS = 0 VDS = 0.8 VDSS TJ = 25°C VGS = 0 TJ = 125°C VGS = 15 V, ID = 0.5ID25 Pulse test, t ≤ 300µS, duty cycle d ≤ 2% VDS = 15 V, ID = 0.5ID25, pulse test typ. max. 100 V V nA µA µA Ω S +175 °C °

DE275-101N30A Datasheet (173.52 KB)