Datasheet Specifications
- Part number
- DE275-101N30A
- Manufacturer
- IXYS Corporation
- File Size
- 173.52 KB
- Datasheet
- DE275-101N30A_IXYSCorporation.pdf
- Description
- RF Power MOSFET
Description
DE275-101N30A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/d.
Features
* min. VDSS VGS(th) IGSS IDSS RDS(on) gfs TJ VGS = 0 V, ID = 3 ma VDS = VGS, ID = 250 µa VGS = ±20 VDC, VDS = 0 VDS = 0.8 VDSS TJ = 25°C VGS = 0 TJ = 125°C VGS = 15 V, ID = 0.5ID25 Pulse test, t ≤ 300µS, duty cycle d ≤ 2% VDS = 15 V, ID = 0.5ID25, pulse test typ. max. 100 V V nA µA µA Ω S +175 °C °DE275-101N30A Distributors
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