DE275-101N30A Datasheet - IXYS Corporation

DE275-101N30A, RF Power MOSFET

DE275-101N30A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/d.

datasheet Preview Page 1 from Datasheet4u.com

DE275-101N30A_IXYSCorporation.pdf

DE275-101N30A Datasheet Preview — Preview of DE275-101N30A PDF

Datasheet Details

Part number:

DE275-101N30A

Manufacturer:

IXYS Corporation

File Size:

173.52 KB

Description:

RF Power MOSFET

Features

* min. VDSS VGS(th) IGSS IDSS RDS(on) gfs TJ VGS = 0 V, ID = 3 ma VDS = VGS, ID = 250 µa VGS = ±20 VDC, VDS = 0 VDS = 0.8 VDSS TJ = 25°C VGS = 0 TJ = 125°C VGS = 15 V, ID = 0.5ID25 Pulse test, t ≤ 300µS, duty cycle d ≤ 2% VDS = 15 V, ID = 0.5ID25, pulse test typ. max. 100 V V nA µA µA Ω S +175 °C °

DE275-101N30A Distributors

📁 Related Datasheet

DE21Xxxxxxxxx DE2812C DE28F800B3 DE28F800F3 DE2B3xxxxxxxx DE2E3KY102MA2BM01

📌 All Tags

DE275-101N30A Power MOSFET IXYS Corporation

IXYS Corporation DE275-101N30A-like datasheet