Datasheet Specifications
- Part number
- DE275-102N06A
- Manufacturer
- IXYS Corporation
- File Size
- 198.32 KB
- Datasheet
- DE275-102N06A_IXYSCorporation.pdf
- Description
- RF Power MOSFET
Description
DE275-102N06A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications Symbol V.
Features
* Isolated SubstrateApplications
* Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PDC PDHS PDAMB RthJC RthJHS Symbol Test Conditions Tc = 25°C Derate 2.0W/°C above 25°C Tc = 25°C VDSS ID25 RDS(on) Maximum Ratings 1000 1000 ±20 ±30 8 48 6 20 5 >200 590 300 3.0 0.25 0.50 V V V V A A A mJ V/ns V/ns W W W C/W C/W SG1 SG2 GATE = = = =DE275-102N06A Distributors
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