DE275-102N06A Datasheet - IXYS Corporation

DE275-102N06A RF Power MOSFET

DE275-102N06A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PDC PDHS PDAMB RthJC RthJHS Symbol Test Conditions Tc = 25°C Derate 2.0W/°C above 25°C Tc = 25°C VDSS ID25 RDS(on) Maximum Ratings 1000 1000 ±20 ±30 8 48 6 20 5 >200 590 300 3.0 0.25 0.50 V V V V A A A mJ V/ns V/ns W W W C/W C/W SG1 SG2 GATE = = = = 1000 V 8A 1.5 Ω 590 W Test Conditions TJ = 25°C to 150°.

DE275-102N06A Features

* Isolated Substrate

* high isolation voltage (>2500V)

* excellent thermal transfer

* Increased temperature and power

* cycling capability IXYS advanced low Qg process Low gate charge and capacitance

DE275-102N06A_IXYSCorporation.pdf