* Isolated Substrate
* high isolation voltage (>2500V)
* excellent thermal transfer
* Increased temperature and power
* cycling capability IXYS advanced low Qg process Low gate charge and capacitance
DE275-102N06A Datasheet (198.32 KB)
DE275-102N06A
IXYS Corporation
198.32 KB
Rf power mosfet.
DE275-102N06A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications Symbol V.
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