DE28F800B3 Datasheet (277.11 KB)
DE28F800B3
Intel
277.11 KB
Fast boot block flash memory.
E
PRODUCT PREVIEW
FAST BOOT BLOCK FLASH MEMORY FAMILY
8 AND 16 MBIT
28F800F3, 28F160F3 Includes Extended and Automotive Temperature Specifications
.
📁 Related Datasheet
DE28F800F3 - 3V Fast Book Block Flash Memory
(Intel)
..
3 Volt Fast Boot Block Flash Memory
28F800F3—Automotive
Preliminary Datasheet
Product Features
s
s
High Performance — Up to 5.
DE2812C - Fixed Inductors
(TOKO)
Fixed Inductors for Surface Mounting
DE2812C
Inductance Range: 0.56~12µH
DIMENSIONS
Remended patterns
3.0 Max.
1.2 Max.
1.0 1.8 (2) 1.2 3.6
.
DE21Xxxxxxxxx - High Voltage Ceramic Capacitors
(muRata)
Note • This PDF catalog is downloaded from the website of Murata Manufacturing co., ltd. Therefore, it’s specifications are subject to change or our .
DE275-101N30A - RF Power MOSFET
(IXYS Corporation)
DE275-101N30A
RF Power MOSFET
N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/d.
DE275-102N06A - RF Power MOSFET
(IXYS Corporation)
DE275-102N06A
RF Power MOSFET
N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications
Symbol V.
DE275-201N25A - RF Power MOSFET
(IXYS Corporation)
DE275-201N25A
RF Power MOSFET
N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications
Symbol V.
DE275-501N16A - RF Power MOSFET
(IXYS Corporation)
Directed Energy, Inc.
An
DE275-501N16A
RF Power MOSFET
Preliminary Data Sheet
IXYS Company
N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg.
DE275X2-102N06A - RF Power MOSFET
(IXYS Corporation)
Directed Energy, Inc.
An
♦ ♦ ♦ ♦ ♦
DE275X2-102N06A
RF Power MOSFET
Preliminary Data Sheet
IXYS Company
Common Source Push-Pull Pair N-Channel Enhan.
