DE275-201N25A Datasheet - IXYS Corporation

DE275-201N25A RF Power MOSFET

DE275-201N25A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω IS = 0 VDSS ID25 RDS(on) Maximum Ratings 200 200 ±20 ±30 25 150 25 20 5 >200 590 V V V V A .

DE275-201N25A Features

* Isolated Substrate

* high isolation voltage (>2500V)

* excellent thermal transfer

* Increased temperature and power

* cycling capability IXYS advanced low Qg process Low gate charge and capacitance

DE275-201N25A_IXYSCorporation.pdf