DE275-201N25A RF Power MOSFET

IXYS Corporation

Description

DE275-201N25A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications Symbol V.

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Datasheet Specifications

Part number: DE275-201N25A
Manufacturer: IXYS Corporation
File Size: 166.81 KB
Datasheet: DE275-201N25A_IXYSCorporation.pdf
Description: RF Power MOSFET

Features

* Isolated Substrate
* high isolation voltage (>2500V)
* excellent thermal transfer
* Increased temperature and power
* cycling capability IXYS advanced low Qg process Low gate charge and capacitance

Applications

* Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω IS = 0 VDSS ID25 RDS(on) Maximum

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DE275-201N25A Power MOSFET IXYS Corporation

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