DE275X2-501N16A Datasheet - IXYS Corporation

DE275X2-501N16A RF Power MOSFET

Directed Energy, Inc. An DE275X2-501N16A RF Power MOSFET Preliminary Data Sheet IXYS Company Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching VDSS ID25 RDS(on) PDHS = = = = 500 V 16 A 0.5 Ω 750 W The DE275X2-501N16A is a matched pair of RF power MOSFET devices in a common source configuration. The device is optimized for push-pull or parallel operation in RF generators and amplifiers at .

DE275X2-501N16A Features

* PDAMB

* Isolated Substrate

* high isolation voltage (>2500V)

* excellent thermal transfer

* Increased temperature and power

* cycling capability IXYS advanced low Qg process easier to drive faster s

DE275X2-501N16A_IXYSCorporation.pdf