* SG1 SG2 GATE = = = = 500 V 16 A .5 Ω 375 W Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω IS = 0 Tc = 25°C Derate 3.0W/°C above
DE275-501N16A Datasheet (102.01 KB)
DE275-501N16A
IXYS Corporation
102.01 KB
Rf power mosfet.
Directed Energy, Inc.
An
DE275-501N16A
RF Power MOSFET
Preliminary Data Sheet
IXYS Company
N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg.
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