Datasheet Specifications
- Part number
- DE275-501N16A
- Manufacturer
- IXYS Corporation
- File Size
- 102.01 KB
- Datasheet
- DE275-501N16A_IXYSCorporation.pdf
- Description
- RF Power MOSFET
Description
Directed Energy, Inc.An DE275-501N16A RF Power MOSFET Preliminary Data Sheet IXYS Company N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg.
Features
* SG1 SG2 GATE = = = = 500 V 16 A .5 Ω 375 W Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω IS = 0 Tc = 25°C Derate 3.0W/°C aboveDE275-501N16A Distributors
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