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DE275-501N16A - RF Power MOSFET

IXYS Corporation

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Datasheet Details

Part number	DE275-501N16A
Manufacturer	IXYS Corporation
File Size	102.01 KB
Description	RF Power MOSFET
Datasheet	DE275-501N16A_IXYSCorporation.pdf

DE275-501N16A Product details

Features

SG1 SG2 GATE = = = = 500 V 16 A .5 Ω 375 W Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω IS = 0 Tc = 25°C Derate 3.0W/°C above 25°C Tc = 25°C DRAIN SD1 SD2.
Isolated Substrate.
high isolation voltage (>2500V).
excellent thermal transfer.
Increased temperature and power.

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Published: Apr 28, 2011 |