DE275-501N16A Datasheet - IXYS Corporation

DE275-501N16A, RF Power MOSFET

Directed Energy, Inc.An DE275-501N16A RF Power MOSFET Preliminary Data Sheet IXYS Company N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg.

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Datasheet Details

Part number:

DE275-501N16A

Manufacturer:

IXYS Corporation

File Size:

102.01 KB

Description:

RF Power MOSFET

Features

* SG1 SG2 GATE = = = = 500 V 16 A .5 Ω 375 W Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω IS = 0 Tc = 25°C Derate 3.0W/°C above

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DE275-501N16A Power MOSFET IXYS Corporation

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