DE275X2-102N06A Datasheet - IXYS Corporation

DE275X2-102N06A RF Power MOSFET

Directed Energy, Inc. An DE275X2-102N06A RF Power MOSFET Preliminary Data Sheet IXYS Company Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching VDSS ID25 RDS(on) PDHS = = = = 1000 V 6A 2.0 Ω 750 W The DE275X2-102N06A is a matched pair of RF power MOSFET devices in a common source configuration. The device is optimized for push-pull or parallel operation in RF generators and amplifiers at f.

DE275X2-102N06A Features

* PDAMB

* Isolated Substrate

* high isolation voltage (>2500V)

* excellent thermal transfer

* Increased temperature and power

* cycling capability IXYS advanced low Qg process easier to drive faster s

DE275X2-102N06A_IXYSCorporation.pdf