DE275X2-102N06A - RF Power MOSFET
Directed Energy, Inc.
An DE275X2-102N06A RF Power MOSFET Preliminary Data Sheet IXYS Company Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching VDSS ID25 RDS(on) PDHS = = = = 1000 V 6A 2.0 Ω 750 W The DE275X2-102N06A is a matched pair of RF power MOSFET devices in a common source configuration.
The device is optimized for push-pull or parallel operation in RF generators and amplifiers at f
DE275X2-102N06A Features
* PDAMB
* Isolated Substrate
* high isolation voltage (>2500V)
* excellent thermal transfer
* Increased temperature and power
* cycling capability IXYS advanced low Qg process easier to drive faster s
