Datasheet Specifications
- Part number
- DSEE15-12CC
- Manufacturer
- IXYS Corporation
- File Size
- 542.55 KB
- Datasheet
- DSEE15-12CC_IXYSCorporation.pdf
- Description
- HiPerDynFREDTM Epitaxial Diode
Description
www.DataSheet4U.com ADVANCE TECHNICAL INFORMATION DSEE15-12CC HiPerDynFREDTM Epitaxial Diode ISOPLUS220TM Electrically Isolated Back Surface IFAV .
Features
* z °C °C °C °C W V~ z z z z z z 1.6 mm (0.063 in) from case for 10 s TC = 25°C 50/60 Hz RMS; IISOL ≤ 1 mA Mounting force typical 260 95 2500 2 Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low cathode to tab capacitApplications
* z z z z Symbol IR d VF RthJC RthCH trr IRM Conditions TVJ = 25°C IF = 15 A; VR = VRRM TVJ = 125°C TVJ = 25°C Characteristic Values typ. max. 100 0.5 1.5 2.05 1.6 0.6 µA mA V V K/W K/W ns z TVJ = 150°C VR = VRRMe z z z Antiparallel diode for high frequency switching devices Antisaturation dioDSEE15-12CC Distributors
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