* z °C °C °C °C W V~ z z z z z z 1.6 mm (0.063 in) from case for 10 s TC = 25°C 50/60 Hz RMS; IISOL ≤ 1 mA Mounting force typical 260 95 2500 2 Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low cathode to tab capacit
DSEE15-12CC Datasheet (542.55 KB)
DSEE15-12CC
IXYS Corporation
542.55 KB
Hiperdynfredtm epitaxial diode.
www.DataSheet4U.com
ADVANCE TECHNICAL INFORMATION
DSEE15-12CC
HiPerDynFREDTM Epitaxial Diode
ISOPLUS220TM
Electrically Isolated Back Surface
IFAV .
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