DSEE30-12A Datasheet - IXYS Corporation

DSEE30-12A HiPerFRED Epitaxial Diode

www.DataSheet4U.com ADVANCE TECHNICAL INFORMATION DSEE30-12A HiPerFREDTM Epitaxial Diode IFAV = 30 A VRRM = 1200 Vc trr = 30 ns VRRMc V 1200 VRRM V 600 Type TO-247 AD DSEE30-12A 1 2 3 1 2 3 Symbol IFRMS IFAVM c IFSM EAS IAR TVJ TVJM Tstg TL Ptot Md Weight Conditions TC = 90°C; rectangular, d = 0.5 TVJ = 45°C; tp = 10 ms (50 Hz), sine TVJ = 25°C; non-repetitive IAS = 1.3 A; L = 180 µH VA = 1.5 VR typ.; f = 10 kHz; repetitive Maximum Ratings 60 30 200 0.2 0.1 -55+175 175 -55.

DSEE30-12A Features

* Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 A °C °C °C °C W Nm/ lb.in. g

* 1.6 mm (0.063 in) from case for 10 s TC = 25°C Mounting Torque typical 260 165 0.9/6 2 Applications

DSEE30-12A_IXYSCorporation.pdf