DSEE30-12A Datasheet - IXYS Corporation

DSEE30-12A, HiPerFRED Epitaxial Diode

www.DataSheet4U.com ADVANCE TECHNICAL INFORMATION DSEE30-12A HiPerFREDTM Epitaxial Diode IFAV = 30 A VRRM = 1200 Vc trr = 30 ns VRRMc V 1200 VRR.

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DSEE30-12A_IXYSCorporation.pdf

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Datasheet Details

Part number:

DSEE30-12A

Manufacturer:

IXYS Corporation

File Size:

117.64 KB

Description:

HiPerFRED Epitaxial Diode

Features

* Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 A °C °C °C °C W Nm/ lb. in. g

Applications

* Symbol IRcd VF e RthJC RthCH trr IRM Conditions TVJ = 25°C VR = VRRM TVJ = 150°C V R = VRRM IF = 30 A; TVJ = 125°C TVJ = 25°C Characteristic Values typ. max. 200 2 1.75 2.5 0.9 0.25 µA mA V V K/W K/W ns A
* Antiparallel diode for high frequency sw

DSEE30-12A Distributors

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DSEE30-12A HiPerFRED Epitaxial Diode IXYS Corporation

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