Datasheet Specifications
- Part number
- DSEE30-12A
- Manufacturer
- IXYS Corporation
- File Size
- 117.64 KB
- Datasheet
- DSEE30-12A_IXYSCorporation.pdf
- Description
- HiPerFRED Epitaxial Diode
Description
www.DataSheet4U.com ADVANCE TECHNICAL INFORMATION DSEE30-12A HiPerFREDTM Epitaxial Diode IFAV = 30 A VRRM = 1200 Vc trr = 30 ns VRRMc V 1200 VRR.
Features
* Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 A °C °C °C °C W Nm/ lb. in. gApplications
* Symbol IRcd VF e RthJC RthCH trr IRM Conditions TVJ = 25°C VR = VRRM TVJ = 150°C V R = VRRM IF = 30 A; TVJ = 125°C TVJ = 25°C Characteristic Values typ. max. 200 2 1.75 2.5 0.9 0.25 µA mA V V K/W K/W ns ADSEE30-12A Distributors
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