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DSEE30-12A

HiPerFRED Epitaxial Diode

DSEE30-12A Features

* Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 A °C °C °C °C W Nm/ lb.in. g

* 1.6 mm (0.063 in) from case for 10 s TC = 25°C Mounting Torque typical 260 165 0.9/6 2 Applications

DSEE30-12A Datasheet (117.64 KB)

Preview of DSEE30-12A PDF

Datasheet Details

Part number:

DSEE30-12A

Manufacturer:

IXYS Corporation

File Size:

117.64 KB

Description:

Hiperfred epitaxial diode.
www.DataSheet4U.com ADVANCE TECHNICAL INFORMATION DSEE30-12A HiPerFREDTM Epitaxial Diode IFAV = 30 A VRRM = 1200 Vc trr = 30 ns VRRMc V 1200 VRR.

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DSEE30-12A HiPerFRED Epitaxial Diode IXYS Corporation

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