* λ λ λ λ λ λ λ λ TC = 25°C 50/60 Hz RMS; IISOL ≤ 1 mA Mounting force typical 50 2500 2 1165 / 2.411 N / lb Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low cathode to tab capacitance (
DSEE6-06CC Datasheet (526.37 KB)
DSEE6-06CC
IXYS
526.37 KB
Epitaxial diode.
ADVANCE TECHNICAL INFORMATION
DSEE 6-06CC
HiPerDynFREDTM Epitaxial Diode
ISOPLUS220TM
Electrically Isolated Back Surface
IFAV = 6 A VRRM = 600 V tr.
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