DSEE6-06CC Datasheet - IXYS

DSEE6-06CC, Epitaxial Diode

ADVANCE TECHNICAL INFORMATION DSEE 6-06CC HiPerDynFREDTM Epitaxial Diode ISOPLUS220TM Electrically Isolated Back Surface IFAV = 6 A VRRM = 600 V tr.

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DSEE6-06CC_IXYS.pdf

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Datasheet Details

Part number:

DSEE6-06CC

Manufacturer:

IXYS

File Size:

526.37 KB

Description:

Epitaxial Diode

Features

* λ λ λ λ λ λ λ λ TC = 25°C 50/60 Hz RMS; IISOL ≤ 1 mA Mounting force typical 50 2500 2 1165 / 2.411 N / lb Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low cathode to tab capacitance (

Applications

* λ Symbol IR c VF e RthJC RthCH trr IRM Conditions TVJ = 25°C VR = VRRM TVJ = 150°C VR = VRRM IF = 10 A; TVJ = 125°C TVJ = 25°C Characteristic Values typ. max. 25 0.2 1.35 1.8 3.0 0.6 µA mA V V K/W K/W ns A λ λ λ λ λ λ λ Antiparallel diode for high frequency switching devices Antisaturation di

DSEE6-06CC Distributors

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DSEE6-06CC Epitaxial Diode IXYS

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