Datasheet Specifications
- Part number
- DSEE6-06CC
- Manufacturer
- IXYS
- File Size
- 526.37 KB
- Datasheet
- DSEE6-06CC_IXYS.pdf
- Description
- Epitaxial Diode
Description
ADVANCE TECHNICAL INFORMATION DSEE 6-06CC HiPerDynFREDTM Epitaxial Diode ISOPLUS220TM Electrically Isolated Back Surface IFAV = 6 A VRRM = 600 V tr.
Features
* λ λ λ λ λ λ λ λ TC = 25°C 50/60 Hz RMS; IISOL ≤ 1 mA Mounting force typical 50 2500 2 1165 / 2.411 N / lb Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low cathode to tab capacitance (Applications
* λ Symbol IR c VF e RthJC RthCH trr IRM Conditions TVJ = 25°C VR = VRRM TVJ = 150°C VR = VRRM IF = 10 A; TVJ = 125°C TVJ = 25°C Characteristic Values typ. max. 25 0.2 1.35 1.8 3.0 0.6 µA mA V V K/W K/W ns A λ λ λ λ λ λ λ Antiparallel diode for high frequency switching devices Antisaturation diDSEE6-06CC Distributors
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