DSEE6-06CC Datasheet - IXYS

DSEE6-06CC Epitaxial Diode

ADVANCE TECHNICAL INFORMATION DSEE 6-06CC HiPerDynFREDTM Epitaxial Diode ISOPLUS220TM Electrically Isolated Back Surface IFAV = 6 A VRRM = 600 V trr = 20 ns VRRMc V 600 VRRM V 300 Type ISOPLUS 220 E153432 DSEE 6-06CC 1 2 3 Symbol IFRMS IFAVM EAS IAR TVJ TVJM Tstg Ptot VISOL FC Weight Conditions TC = 150°C; rectangular, d = 0.5 TVJ = 25°C; non-repetitive IAS = 0.8 A; L = 180 µH VA = 1.5 VR typ.; f = 10 kHz; repetitive Maximum Ratings 20 6 0.1 0.1 -40+175 175 -40+150 A A mJ A °C .

DSEE6-06CC Features

* λ λ λ λ λ λ λ λ TC = 25°C 50/60 Hz RMS; IISOL ≤ 1 mA Mounting force typical 50 2500 2 1165 / 2.411 N / lb Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low cathode to tab capacitance (

DSEE6-06CC_IXYS.pdf