DSEI120 Fast Recovery Epitaxial Diode

IXYS Corporation

Description

Fast Recovery Epitaxial Diode (FRED) DSEI 120 IFAVM = 126 A VRRM = 600 V trr = 35 ns VRSM V 600 VRRM V 600 Type A C TO-247 AD C DSEI 120-06A .

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Datasheet Specifications

Part number: DSEI120
Manufacturer: IXYS Corporation
File Size: 43.08 KB
Datasheet: DSEI120_IXYSCorporation.pdf
Description: Fast Recovery Epitaxial Diode

Features

* q q q q q q q TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine I2t TVJ = 45°C t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine International standard package JEDEC TO-247 AD Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery b

Applications

* q TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ TVJM Tstg Ptot Md Weight TC = 25°C Mounting torque q q q 357 0.81.2 6 q Nm g q q q Symbol Test Conditions TVJ = 25°C TVJ = 25°C TVJ = 125°C IF = 70 A; Characteristic Values typ. max. 3 0.75 20 1.12 1.3 0.85 3.5 0.35 0.25 35

DSEI120 Distributors

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DSEI120-06A DSEI120-12AZ DSEI12 DSEI12-06A DSEI12-06AS DSEI12-10A

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DSEI120 Fast Recovery Epitaxial Diode IXYS Corporation

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