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DSEI120 Datasheet - IXYS Corporation

DSEI120 - Fast Recovery Epitaxial Diode

Fast Recovery Epitaxial Diode (FRED) DSEI 120 IFAVM = 126 A VRRM = 600 V trr = 35 ns VRSM V 600 VRRM V 600 Type A C TO-247 AD C DSEI 120-06A A C A = Anode, C = Cathode Symbol IFRMS IFAVM ÿÿx IFAV y IFRM IFSM Test Conditions TVJ = TVJM TC = 70°C; rectangular, d = 0.5 TC = 110°C; rectangular, d = 0.5 tP < 10 m s; rep. rating, pulse width limited by TVJM TVJ = 45°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings 100 126 77 tbd 600 660 540 600 1800 1800 1450 1500 -40.

DSEI120 Features

* q q q q q q q TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine I2t TVJ = 45°C t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine International standard package JEDEC TO-247 AD Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery b

DSEI120_IXYSCorporation.pdf

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Datasheet Details

Part number:

DSEI120

Manufacturer:

IXYS Corporation

File Size:

43.08 KB

Description:

Fast recovery epitaxial diode.

DSEI120 Distributor

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DSEI120 Fast Recovery Epitaxial Diode IXYS Corporation