* / Advantages:
* Planar passivated chips
* Low leakage current
* Very short recovery time
* Improved thermal behaviour
* Very low Irm-values
* Very soft recovery behaviour
* Avalanche voltage rated for reliable operation
* Soft reverse recovery for low EMI/RFI
* Lo
DSEI12-10A Datasheet (124.54 KB)
DSEI12-10A
IXYS
124.54 KB
Fast recovery epitaxial diode.
FRED
Fast Recovery Epitaxial Diode Single Diode
Part number
DSEI12-10A
3
1
DSEI12-10A
VRRM = 1000 V
I FAV
=
12 A
t rr
=
45 ns
Backside: cat.
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