DSEI19-06AS Datasheet - IXYS Corporation

DSEI19-06AS Fast Recovery Epitaxial Diode

DSEI19-06AS Features

* / Advantages:

* Planar passivated chips

* Low leakage current

* Very short recovery time

* Improved thermal behaviour

* Very low Irm-values

* Very soft recovery behaviour

* Avalanche voltage rated for reliable operation

* Soft reverse recovery for low EMI/RFI

* Lo

Datasheet Details

DSEI19-06AS

IXYS Corporation

134.14 KB

Fast recovery epitaxial diode.

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