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DSEI19 Datasheet - IXYS Corporation

DSEI19 Fast Recovery Epitaxial Diode

www.DataSheet4U.com Fast Recovery Epitaxial Diode (FRED) DSEI 19 VRRM = 600 V IFAVM = 20 A trr = 35 ns VRSM V 600 VRRM V 600 Type A C TO-263 AA NC A DSEI 19-06AS C (TAB) A = Anode, C = Cathode, NC = No connection, TAB = Cathode Symbol IFRMS IFAVM ÿÿx IFRM IFSM Test Conditions TVJ = TVJM TC = 65°C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM TVJ = 45°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings 25 20 150 100 110 85 95 50 50 36 37 -4.

DSEI19 Features

* International standard surface mount package JEDEC TO-263 AA Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 q q q q q q q TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ TVJM Tstg Ptot Wei

DSEI19_IXYSCorporation.pdf

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Datasheet Details

Part number:

DSEI19

Manufacturer:

IXYS Corporation

File Size:

55.63 KB

Description:

Fast recovery epitaxial diode.

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DSEI19 DSEI19 Fast Recovery Epitaxial Diode IXYS Corporation

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