* q q q q q q q q q NPT IGBT technology low saturation voltage low switching losses square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy paralleling MOS input, voltage controlled optional ultra fast diode International standard package Advantages µs W W
IXDH20N120 Datasheet (78.68 KB)
IXDH20N120
IXYS Corporation
78.68 KB
High voltage igbt.
High Voltage IGBT with optional Diode
Short Circuit SOA Capability Square RBSOA
IXDH 20N120 VCES = 1200 V = 38 A IXDH 20N120 D1 IC25 VCE(sat) typ = 2.
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