* NPT IGBT technology
* low saturation voltage
* low switching losses
* square RBSOA, no latch up
* high short circuit capability
* positive temperature coefficient for easy paralleling
* MOS input, voltage controlled
* optional ultra f
IXDH30N120 Datasheet (132.70 KB)
IXDH30N120
IXYS
132.70 KB
High voltage igbt.
IXDH 30N120 IXDH 30N120 D1
High Voltage IGBT with optional Diode
Short Circuit SOA Capability Square RBSOA
VCES = 1200 V
IC25
= 60 A
V = CE(sat) .
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