IXDH30N120 Datasheet - IXYS

IXDH30N120 High Voltage IGBT

IXDH 30N120 IXDH 30N120 D1 High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA VCES = 1200 V IC25 = 60 A V = CE(sat) typ 2.4 V C G C G E E IXDH 30N120 IXDH 30N120 D1 TO-247 AD (IXDH) G C E G = Gate, C = Collector , C (TAB) E = Emitter TAB = Collector Symbol VCES VCGR VGES VGEM IC25 IC90 ICM RBSOA tSC (SCSOA) PC TJ Tstg Md Weight Symbol V(BR)CES VGE(th) ICES I GES VCE(sat) Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kΩ Continuous Transient.

IXDH30N120 Features

* NPT IGBT technology

* low saturation voltage

* low switching losses

* square RBSOA, no latch up

* high short circuit capability

* positive temperature coefficient for easy paralleling

* MOS input, voltage controlled

* optional ultra f

IXDH30N120 Datasheet (132.70 KB)

IXDH30N120 Datasheet Preview — Preview of IXDH30N120 PDF

Datasheet Details

Part number:

IXDH30N120

Manufacturer:

IXYS

File Size:

132.70 KB

Description:

High voltage igbt.

📁 Related Datasheet

IXDH30N120D1 High Voltage IGBT (IXYS)

IXDH35N60B IGBT with optional Diode (IXYS Corporation)

IXDH35N60BD1 IGBT with optional Diode (IXYS Corporation)

IXDH20N120 High Voltage IGBT (IXYS Corporation)

IXDH20N120D1 High Voltage IGBT (IXYS Corporation)

IXD1209 High Speed LDO Regulator (IXYS)

IXD1212 High Speed LDO Regulator (IXYS)

IXD1504 0.6uA Current Consumption Voltage Regulator (IXYS)

IXD1701 28V Input High Speed Voltage Regulator (IXYS)

IXD5121 Voltage Detector (IXYS)

TAGS

IXDH30N120 High Voltage IGBT IXYS

Image Gallery

IXDH30N120 Distributor