IXDH30N120D1, IXDH30N120 Datasheet - IXYS

IXDH30N120D1 High Voltage IGBT

IXDH 30N120 IXDH 30N120 D1 High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA VCES = 1200 V IC25 = 60 A V = CE(sat) typ 2.4 V C G C G E E IXDH 30N120 IXDH 30N120 D1 TO-247 AD (IXDH) G C E G = Gate, C = Collector , C (TAB) E = Emitter TAB = Collector Symbol VCES VCGR VGES VGEM IC25 IC90 ICM RBSOA tSC (SCSOA) PC TJ Tstg Md Weight Symbol V(BR)CES VGE(th) ICES I GES VCE(sat) Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kΩ Continuous Transient.

IXDH30N120D1 Features

* NPT IGBT technology

* low saturation voltage

* low switching losses

* square RBSOA, no latch up

* high short circuit capability

* positive temperature coefficient for easy paralleling

* MOS input, voltage controlled

* optional ultra f

IXDH30N120-IXYS.pdf

IXDH30N120D1 Datasheet Preview — This datasheet PDF includes multiple part numbers: IXDH30N120D1, IXDH30N120. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

IXDH30N120D1, IXDH30N120

Manufacturer:

IXYS

File Size:

132.70 KB

Description:

High voltage igbt.

Note:

This datasheet PDF includes multiple part numbers: IXDH30N120D1, IXDH30N120.
Please refer to the document for exact specifications by model.

IXDH30N120D1 Distributor

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IXDH30N120D1 IXDH30N120 High Voltage IGBT IXYS