IXFB70N60Q2 Datasheet - IXYS Corporation

IXFB70N60Q2 Power MOSFET

www.DataSheet4U.com Advance Technical Information HiPerFETTM Power MOSFETs Q-Class IXFB 70N60Q2 N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr VDSS = 600 V ID25 = 70 A RDS(on)= 80 mΩ ≤ 250 ns trr PLUS 264TM (IXFB) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL 1.6 mm (0.063 in.) from case for 10 s Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited b.

IXFB70N60Q2 Features

* Double metal process for low gate resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic rectifier Applications DC-DC converters Switched-mode and resonant-mode power supplies, >500kHz switching DC choppers Pulse generation Laser dri

IXFB70N60Q2_IXYSCorporation.pdf