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IXFH28N50F Datasheet - IXYS Corporation

IXFH28N50F HiPerRF Power MOSFETs

Advance Technical Information HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr IXFH 28N50F VDSS IXFT 28N50F ID25 RDS(on) = 500V = 28A = 190mΩ trr ≤ 250 ns TO-247 AD (IXFH) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg www.DataSheet4U.net Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 2.

IXFH28N50F Features

* l RF capable MOSFETs l Double metal process for low gate resistance l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect l Fast intrinsic rectifier Applications l DC-DC converters l Switched-mode and resonant-mode power supplies, >500kHz switching l DC

IXFH28N50F_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXFH28N50F

Manufacturer:

IXYS Corporation

File Size:

124.15 KB

Description:

Hiperrf power mosfets.

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