IXFH28N50Q Datasheet - IXYS Corporation

IXFH28N50Q HiPerFET Power MOSFETs Q-Class

Advanced Technical Information HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt IXFH 28N50Q IXFT 28N50Q VDSS = 500 V = 28 A ID25 RDS(on) = 0.20 Ω trr ≤ 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL www.DataSheet4U.net Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ .

IXFH28N50Q Features

* z z Md 1.13/10 Nm/lb.in. 6 4 g g IXYS advanced low Qg process Low gate charge and capacitances - easier to drive - faster switching International standard packages Low RDS (on) Weight z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2.

IXFH28N50Q_IXYSCorporation.pdf