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IXFH320N10T2 Datasheet - IXYS Corporation

IXFH320N10T2 - Power MOSFET

TrenchT2TM HiperFETTM Power MOSFET IXFH320N10T2 IXFT320N10T2 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode VDSS = ID25 = RDS(on) ≤ 100V 320A 3.5mΩ TO-247 (IXFH) Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dv/dt PD TJ TJM Tstg TL Tsold Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C (Chip Capability) Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 17

IXFH320N10T2 Features

* z International Standard Packages z High Current Handling Capability z Fast Intrinsic Diode z Avalanche Rated z Fast Intrinsic Diode z Low RDS(on) Advantages z Easy to Mount z Space Savings z High Power Density Applications z Synchronous Recification z DC-DC Converters z Battery Chargers z Switch-

IXFH320N10T2_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXFH320N10T2

Manufacturer:

IXYS Corporation

File Size:

187.09 KB

Description:

Power mosfet.

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