Advance Technical Information TrenchT2TM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH340N075T2 IXFT340N075T2 VDSS ID25 RDS(on) = 75V = 340A ≤ 3.2mΩ TO-247 (IXFH) Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL Tsold Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C (Chip Capability) Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C Maximum
IXFH340N075T2_IXYSCorporation.pdf
Datasheet Details
Part number:
IXFH340N075T2
Manufacturer:
IXYS Corporation
File Size:
198.02 KB
Description:
Power mosfet.