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IXFH34N65X3 Datasheet - IXYS

IXFH34N65X3 - N-Channel MOSFET

X3-Class HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXFH34N65X3 D G S Symbol VDSS V DGR V GSS VGSM ID25 IDM I A E AS dv/dt P D TJ T JM Tstg T L Md Weight Test Conditions TJ = 25C to 150C T J = 25C to 150C, R GS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM T C = 25C T C = 25C IS  IDM, VDD  VDSS, TJ  150°C T C = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10s Mounting Torque Maxi

IXFH34N65X3 Features

* International Standard Package

* Low R and Q DS(ON) G

* Avalanche Rated

* Low Package Inductance Advantages

* High Power Density

* Easy to Mount

* Space Savings Applications

* Switch-Mode and Resonant-Mode Power Supplies

* DC-DC Converters

* PFC Circ

IXFH34N65X3-IXYS.pdf

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Datasheet Details

Part number:

IXFH34N65X3

Manufacturer:

IXYS

File Size:

1.14 MB

Description:

N-channel mosfet.

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IXFH34N65X3 N-Channel MOSFET IXYS