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IXFH30N50 - HiPerFET Power MOSFETs

IXFH30N50 Description

HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS IXFH/IXFT 30N50 IXFH/IXFT 32N50 500 V 500 V ID25 30 A 3.

IXFH30N50 Features

* 1.6 mm (0.062 in. ) from case for 10 s Mounting torque 300 1.13/10 6
* Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 0.102 2 -0.206 ±100 TJ = 25°C TJ = 125°C 200 1 0.15 0.16 4 V %/K V %/K nA mA mA W

IXFH30N50 Applications

* VDSS VGS = 0 V, ID = 1 mA VDSS temperature coefficient VDS = VGS, ID = 4 mA VGS(th) temperature coefficient VGS = ±20 VDC, VDS = 0 VDS = 0.8
* VDSS VGS = 0 V VGS = 10 V, ID = 15A
* DC-DC converters
* Battery chargers
* Switched-mode and resonant-mode power supplies

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Datasheet Details

Part number
IXFH30N50
Manufacturer
IXYS
File Size
110.19 KB
Datasheet
IXFH30N50_IXYS.pdf
Description
HiPerFET Power MOSFETs

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HiPerFET Power MOSFETs IXYS
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