IXFH30N50 Datasheet - IXYS

IXFH30N50 HiPerFET Power MOSFETs

HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS IXFH/IXFT 30N50 IXFH/IXFT 32N50 500 V 500 V ID25 30 A 32 A RDS(on) 0.16 W 0.15 W trr £ 250 ns TO-247 AD (IXFH) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAS EAR dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C pulse width limited by TJM TC = 25°C TC = 25°C ID = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ .

IXFH30N50 Features

* 1.6 mm (0.062 in.) from case for 10 s Mounting torque 300 1.13/10 6

* Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 0.102 2 -0.206 ±100 TJ = 25°C TJ = 125°C 200 1 0.15 0.16 4 V %/K V %/K nA mA mA W

IXFH30N50_IXYS.pdf