IXFH30N60P Datasheet - IXYS

IXFH30N60P Power MOSFET

Advance Technical Information PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated IXFH 30N60P IXFT 30N60P IXFV 30N60P IXFV 30N60PS VDSS ID25 = = RDS(on) ≤ ≤ trr www.DataSheet4U.com 600 V 30 A 240 mΩ 250 ns Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 2.

IXFH30N60P Features

* z Fast Recovery diode z Unclamped Inductive Switching (UIS) rated z International standard packages z Low package inductance - easy to drive and to protect DS99316(06/05) © 2005 IXYS All rights reserved IXFH 30N60P IXFV 30N60P IXFV 30N60PS IXFT 30N60P Symbol Test Conditions Characteristic Values (

IXFH30N60P Datasheet (246.49 KB)