IXFH30N60X - Power MOSFET
X-Class HiPerFETTM Power MOSFET Preliminary Technical Information IXFT30N60X IXFQ30N60X IXFH30N60X VDSS = ID25 = RDS(on) 600V 30A 155m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150°C TC = 25C Maximum Lead.
IXFH30N60X Features
* International Standard Packages
* Low RDS(ON) and QG
* Avalanche Rated
* Low Package Inductance
Advantages
* High Power Density
* Easy to Mount
* Space Savings
Applications
* Switch-Mode and Resonant-Mode Power Supplies
* DC-DC Converters
* PFC Circuits