* IXYS advanced low gate charge process
* International standard packages
* Low gate charge and capacitance - easier to drive - faster switching
* Low RDS (on)
* Unclamped Inductive Switching (UIS) rated
* Molding epoxies meet UL 94 V-0 flammability cl
IXFH80N10Q Datasheet (73.94 KB)
IXFH80N10Q
IXYS Corporation
73.94 KB
Hiperfet power mosfets.
HiPerFETTM Power MOSFETs
Q-Class
N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances
Preliminary data
IXFH 80N10Q.
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