IXFH80N10Q, IXFT80N10Q Datasheet - IXYS Corporation

IXFH80N10Q - HiPerFET Power MOSFETs

HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Preliminary data IXFH 80N10Q IXFT 80N10Q VDSS ID25 RDS(on) = 100 V = 80 A = 15 mW trr £ 200ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight www.DataSheet4U.net Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/.

IXFH80N10Q Features

* IXYS advanced low gate charge process

* International standard packages

* Low gate charge and capacitance - easier to drive - faster switching

* Low RDS (on)

* Unclamped Inductive Switching (UIS) rated

* Molding epoxies meet UL 94 V-0 flammability cl

IXFT80N10Q_IXYSCorporation.pdf