IXFH80N20Q, IXFK80N20Q Datasheet - IXYS

IXFH80N20Q - Power MOSFETs Q-Class

www.DataSheet4U.com HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in) from case for 10 s Mounting torque Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W .

IXFH80N20Q Features

* Low gate charge

* International standard packages

* Epoxy meet UL 94 V-0, flammability classification

* Low RDS (on) HDMOSTM process

* Rugged polysilicon gate cell structure

* Avalanche energy and current rated

* Fast intrinsic Rectifier Adva

IXFK80N20Q_IXYS.pdf