IXFH80N20Q Power MOSFETs Q-Class
www.DataSheet4U.com HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in) from case for 10 s Mounting torque Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W .
IXFH80N20Q Features
* Low gate charge
* International standard packages
* Epoxy meet UL 94 V-0, flammability classification
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Avalanche energy and current rated
* Fast intrinsic Rectifier Adva