* z z 1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-247 TO-264 300 z 1.13/10 Nm/lb.in. 6 10 g g International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z z Symbol Test Conditions (TJ = 25°C, unless o
IXFH88N30P Datasheet (618.57 KB)
IXFH88N30P
IXYS
618.57 KB
Polarht hiperfet power mosfet.
PolarHTTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Fast Intrinsic Diode Preliminary Data Sheet
IXFH 88N30P IXFK 88N30P
VDSS ID25
www.DataSh.
📁 Related Datasheet
IXFH88N30P Polar HiPerFET Power MOSFET (IXYS Corporation)
IXFH80N08 Power MOSFET (IXYS)
IXFH80N085 Power MOSFET (IXYS Corporation)
IXFH80N10 Power MOSFET (IXYS Corporation)
IXFH80N10Q HiPerFET Power MOSFETs (IXYS Corporation)
IXFH80N15Q Power MOSFET (IXYS Corporation)
IXFH80N20Q Power MOSFETs Q-Class (IXYS)
IXFH80N25X3 Power MOSFET (IXYS)
IXFH80N60X2A N-Channel MOSFET (INCHANGE)
IXFH80N60X2A Power MOSFET (IXYS)
