IXFH88N30P Datasheet, Mosfet, IXYS

IXFH88N30P Features

• Mosfet z z 1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-247 TO-264 300 z 1.13/10 Nm/lb.in. 6 10 g g International standard packages Unclamped Inductive Switching (UIS) rated L

PDF File Details

Part number:

IXFH88N30P

Manufacturer:

IXYS

File Size:

618.57kb

Download:

📄 Datasheet

Description:

Polarht hiperfet power mosfet.

TAGS

IXFH88N30P

IXYS

📁 Related Datasheet

IXFH88N30P - Polar HiPerFET Power MOSFET (IXYS Corporation)
PolarTM HiPerFETTM Power MOSFET IXFT88N30P IXFH88N30P IXFK88N30P VDSS ID25 trr RDS(on) = = ≤ ≤ 300V 88A 40mΩ 200ns N-Channel Enhancement Mode Av.

IXFH80N08 - Power MOSFET (IXYS)
HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt Preliminary data sheet IXFH 80N08 IXFT 80N08 VDSS ID25 RDS(on) = 80.

IXFH80N085 - Power MOSFET (IXYS Corporation)
HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt Preliminary data sheet IXFH 80N085 IXFT 80N085 VDSS = 85 V = 80 A ID.

IXFH80N10 - Power MOSFET (IXYS Corporation)
.. HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt Preliminary data sheet IXFH 80N10 IXFT 80N10 VD.

IXFH80N10Q - HiPerFET Power MOSFETs (IXYS Corporation)
HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Preliminary data IXFH 80N10Q.

IXFH80N15Q - Power MOSFET (IXYS Corporation)
HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Q g IXFH 80N15Q IXFK 80N15Q IXFT 80N15Q V DSS ID25 RDS(.

IXFH80N20Q - Power MOSFETs Q-Class (IXYS)
.. HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary data sheet Symbol VDS.

IXFH80N25X3 - Power MOSFET (IXYS)
X3-Class HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXFP80N25X3 IXFQ80N25X3 IXFH80N25X3 VDSS = ID25 =  RDS(on) 250V 80A 16.

IXFH80N60X2A - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) ≤38mΩ@VGS= 10V ·Fast .

IXFH80N60X2A - Power MOSFET (IXYS)
Advance Technical Information X2-Class HiPerFETTM Power MOSFET AEC Q101 Qualified IXFH80N60X2A VDSS = ID25 =  RDS(on) 600V 80A 38m N-Channel En.