* l Low gate charge l International standard packages l Epoxy meet UL 94 V-0, flammability classification l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Avalanche energy and current rated l Fast intrinsic Rectifier Advantages l Easy to mount l Space savings l High power dens
IXFH80N15Q Datasheet (125.29 KB)
IXFH80N15Q
IXYS Corporation
125.29 KB
Power mosfet.
HiPerFETTM Power MOSFETs
Q-Class
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Q
g
IXFH 80N15Q IXFK 80N15Q IXFT 80N15Q
V DSS
ID25
RDS(.
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