IXFH80N15Q Datasheet - IXYS Corporation

IXFH80N15Q Power MOSFET

HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Q g IXFH 80N15Q IXFK 80N15Q IXFT 80N15Q V DSS ID25 RDS(on) trr = 150 V = 80 A = 22.5 mW £ 200 ns Preliminary data sheet Symbol VDSS VDGR VGS V GSM ID25 I DM IAR E AR EAS dv/dt PD T J TJM T stg TL Md Weight Symbol V DSS V GS(th) IGSS IDSS RDS(on) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C T C = 25°C, pulse width limited by T JM TC = 25.

IXFH80N15Q Features

* l Low gate charge l International standard packages l Epoxy meet UL 94 V-0, flammability classification l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Avalanche energy and current rated l Fast intrinsic Rectifier Advantages l Easy to mount l Space savings l High power dens

IXFH80N15Q_IXYSCorporation.pdf