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IXFH80N65X2 Datasheet - IXYS

IXFH80N65X2 - Power MOSFET

X2-Class HiPerFETTM Power MOSFET IXFH80N65X2 IXFK80N65X2 VDSS = ID25 = RDS(on) 650V 80A 38m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.)

IXFH80N65X2 Features

* International Standard Packages

* LAovwalaRnDcSh(OeN) RanadteQd G

* Low Package Inductance Advantages

* High Power Density

* Easy to Mount

* Space Savings Applications

* Switch-Mode and Resonant-Mode Power Supplies

* DC-DC Converters

* PFC Circuits

IXFH80N65X2-IXYS.pdf

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Datasheet Details

Part number:

IXFH80N65X2

Manufacturer:

IXYS

File Size:

205.10 KB

Description:

Power mosfet.

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IXFH80N65X2 Power MOSFET IXYS