* International standard packages
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching (UIS) rated
* Low package inductance - easy to drive and to protect
* Fast intrinsic rectifier Symbol Test Condi
IXFK180N10 Datasheet (143.23 KB)
IXFK180N10
IXYS Corporation
143.23 KB
Power mosfets.
www.DataSheet4U.com
HiPerFETTM Power MOSFETs
Single MOSFET Die
Preliminary data sheet
Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD.
📁 Related Datasheet
IXFK180N15P Polar HiPerFET Power MOSFET (IXYS)
IXFK180N07 Power MOSFET (IXYS)
IXFK180N07 N-Channel MOSFET Transistor (Inchange Semiconductor)
IXFK180N25T GigaMOS Power MOSFET (IXYS)
IXFK180N25T GigaMOS Power MOSFET (IXYS)
IXFK100N10 Power MOSFET (IXYS Corporation)
IXFK100N25 Power MOSFET (IXYS Corporation)
IXFK100N65X2 Power MOSFET (IXYS)
IXFK102N30P Polar MOSFETs (IXYS Corporation)
IXFK105N07 HiPerFET Power MOSFETs (IXYS Corporation)
