IXFK180N15P Datasheet - IXYS

IXFK180N15P Polar HiPerFET Power MOSFET

Advance Technical Information www.DataSheet4U.com PolarTM HiPerFET Power MOSFET N-Channel Enhancement Mode IXFK 180N15P VDSS ID25 = 150 V = 180 A RDS(on) ≤ 11 mΩ Symbol VDSS VDGR VDSS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Transient TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°.

IXFK180N15P Features

* z z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 1.6 mm (0.062 in.) from case for 10 s Mounting torque 300 Advantages z z z 1.13/10 Nm/lb.in. 10 g Easy to mount Space savings High power density Symbol Test C

IXFK180N15P_IXYS.pdf